BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD NPN Silicon Power Transistors. Designed for Complementary Use with the BD Series at 25°C Case Temperature 10 A Continuous Collector Current . VCER. Collector-Emitter Voltage (RBE = Ω). BD V. BDA. BDB. BDC. VEBO. Emitter-Base Voltage.
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Production processing does notnecessarily include testing of all parameters. Pnp silicon power transistors online from elcodis, view and download bd pdf datasheet, power drivers specifications. Human body model iiii hbm iiiiii 3b iii v iiiiiiiii esd.
Datasheet identification advance information product status formative or in design first production definition this datasheet contains the design specifications for product development. July rev 2 19 9 bda bdc npn power transistors features npn transistors applications audio, general purpose switching and amplifier transistors description the devices are manufactured in planar technology with base island layout.
BD245 Datasheet, Equivalent, Cross Reference Search
Order this document motorola by bdb d semiconductor technical data npn bdb complementary silicon plastic bdc power transistors pnp. The datasheet is printed for reference information only. Trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Npn silicon power transistors online from elcodis, view and download bd pdf datasheet, power drivers specifications.
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Bdd245 rev 2 19 9 bda bdc npn power transistors features npn transistors applications audio, general purpose switching and amplifier transistors description the devices are manufactured in planar.
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Npn epitaxial silicon transistor datasheet, cross reference, circuit and application notes in pdf format.
Bdc complementary silicon plastic power transistors. This datasheet contains specifications on a product that has been discontinued by fairchild semiconductor.
BD Datasheet(PDF) – Inchange Semiconductor Company Limited
This datasheet contains preliminary data, and supplementary data dwtasheet be published at a later date. Bd, bda, bdb, bdc npn silicon power transistors 2 june revised september specifications are subject to change without notice.
Bdf datasheet, equivalent, cross reference search. These parameters must be measured using voltagesensing contacts, separate from the current carrying contacts. Operating and storage junction temperature range tj, tstg 65 to c thermal characteristics characteristic symbol max. Products conform to specifications in accordancewith the terms of power innovations standard warranty. Npn general purpose transistors, especially suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, hifi amplifiers, signal processing circuits of television.
Specifications may change in any manner without notice. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. These parameters must be measured using dqtasheet techniques, tp s, duty cycle.
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